The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Feb. 21, 2001
Chin-Hsi Lin, Hsinchu, TW;
Chi-Ming Weng, Hsinchu, TW;
Abstract
A ferroelectric capacitor memory cell includes two transistors coupled to two ferroelectric capacitors respectively. The two ferroelectric capacitors store complementary polarization states, which defines a single data state of memory cell. The plate line is coupled to one end of the ferroelectric capacitors. The word line is coupled to the gates of the two transistors. The bit lines are coupled to the source/drain of the two transistors. According to the present invention, the disclosed detecting scheme precharges the bit lines to logical one voltage, setting the word line and plate line to logical zero voltage, stepping the word line from the initial logical zero voltage to logical one voltage, stepping the plate line from the initial logical zero voltage to logical one voltage, enabling the sensing amplifier to sense the differential charge on the bit lines, discharging the bit lines to restore the original data.