The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Jun. 02, 1999
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 2/772 ; G03B 2/742 ; G03B 2/754 ;
U.S. Cl.
CPC ...
G03B 2/772 ; G03B 2/742 ; G03B 2/754 ;
Abstract
The two dimensional intensity profile of radiation applied to a semiconductor wafer during photolithography is controlled by passing the radiation beam through an attenuating member before the beam is imaged by a mask onto the wafer. The attenuating member is preferably ring shaped and is formed of a semi-transparent material such as Mo Bi Si O , or a material that is partially reflective of the radiation.
Quick Actions:
Chu, Tsu-Yu. (2002). Method and apparatus for controlling the dose of radiations applied to a semiconductor wafer during photolithography (U.S. Patent No. 6396567). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6396567
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile