The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Sep. 23, 1999
Semiconductor device and semiconductor integrated circuit having a conductive film on element region
Yuji Takeuchi, Kawasaki, JP;
Riichiro Shirota, Fujisawa, JP;
Seiichi Aritome, Yokohama, JP;
Masashi Umemura, Yokkaichi, JP;
Yuuichiro Murahama, Yokkaichi, JP;
Hitoshi Araki, Yokkaichi, JP;
Masamitsu Yahata, Yokohama, JP;
Osamu Ikeda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a semiconductor device of MOS structure, the element region has a shape such as a square shape which has a plurality of sides and a plurality of corners. On the element region, a conductive film which constitutes one electrode of the MOS structure is formed. The other electrode of the MOS structure is a silicon substrate. The conductive film is provided so as to cover at least sides adjacent to each other and so as not to cover the corners including the corners which are the contact points (intersecting points) of the adjacent sides. Further, in case the element region is in a ring shape, the conductive film is provided so as to cover none of the corners including the inside corners of the ring-shaped element region. By the above-mentioned structure, the occurrence of breakdown in the insulation film in the MOS structure can be prevented, and the reliability thereof can be enhanced.