The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2002

Filed:

Oct. 11, 1996
Applicant:
Inventors:

Hisao Hayashi, Kanagawa, JP;

Yasushi Shimogaichi, Kanagawa, JP;

Keiji Kato, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A thin film semiconductor device having improved operating characteristics and reliability of a thin film transistor formed on a glass substrate. The thin film semiconductor device has a thin film transistor formed on a glass substrate containing alkali metal. The surface of the glass substrate is covered by a buffer layer . The thin film transistor formed on this buffer layer has a polycrystalline semiconductor thin film as an active layer. The buffer layer includes at least a silicon nitride film and protects the thin film transistor from contamination by alkali metals such as Na and has a thickness such that it can shield the thin film transistor from an electric field created by localized alkali metal ions (Na ).


Find Patent Forward Citations

Hayashi, Hisao. (2002). Thin film semiconductor device having a buffer layer (U.S. Patent No. 6396079). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6396079

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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