The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Aug. 06, 1998
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for anisotropic wet etching is disclosed. In to this invention, a photo mask for the etching mask suited in the anisotropic wet etching is provided. In the photo mask, a pattern with a series of adjacent corners having a substantially rectangular, angle is formed. At the corner areas compensational patterns comprising masked grids are prepared. The pattern on the photo mask is then transferred to an etching mask of a semiconductor substrate such that a multi-level terrace structure with fine corners may be prepared during the etching of the substrate. The method of this invention is also applicable to semiconductor materials with the same diamond structure as that of silicon.