The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Aug. 15, 2000
Len-Yi Leu, Hsinchu, TW;
Abstract
A process is provided for manufacturing a semiconductor device. A lower polycrystalline silicon layer is deposited on a substrate surface and on one or more structures that protrude from the substrate surface. A dielectric layer is formed on the lower polycrystalline silicon layer. An upper polycrystalline silicon layer is deposited on the dielectric layer. The upper polycrystalline silicon layer is patterned to form one or more upper capacitor plates. Next, the exposed portions of the dielectric layer not covered by the one or more upper capacitor plates are removed. After the steps of patterning the upper polycrystalline silicon area and removing the exposed portions of the dielectric layer, the lower polycrystalline silicon layer is patterned to form at least one or more lower capacitor plates. Each lower capacitor plate underlies a corresponding one of the upper capacitor plates and a portion of the dielectric layer covered by the corresponding upper capacitor plate.