The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2002

Filed:

Apr. 01, 1998
Applicant:
Inventors:

Patrick A. Van Cleemput, Sunnyvale, CA (US);

George D. Papasouliotis, Fishkill, NY (US);

Mark A. Logan, Pleasant Valley, NY (US);

Bart van Schravendijk, Sunnyvale, CA (US);

William J. King, Nashua, NH (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/400 ; C23C 1/432 ; H05H 1/24 ; H05H 1/02 ; B44C 1/22 ;
U.S. Cl.
CPC ...
C23C 1/400 ; C23C 1/432 ; H05H 1/24 ; H05H 1/02 ; B44C 1/22 ;
Abstract

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.

Published as:

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Van Cleemput, Patrick. (2002). Very high aspect ratio gapfill using hdp (U.S. Patent No. 6395150). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6395150

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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