The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Sep. 01, 2000
Raymond A. Cirelli, Hillsborough, NJ (US);
Omkaram Nalamasu, Bridgewater, NJ (US);
Sanjay Patel, New Providence, NJ (US);
Stanley Pau, North Plainfield, NJ (US);
George P Watson, Avon, NJ (US);
Christopher Alan White, Basking Ridge, NJ (US);
Robert Waverly Zehner, Cambridge, MA (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
An improved lithographic process for fabricating articles comprising photonic band gap materials with micron-scale periodicities is provided, the process readily capable of being performed by current lithographic processes and equipment. The process involves providing a three-dimensional structure made up of a plurality of stacked layers, where each layer contains a substantially planar lattice of shapes of a first material, typically silicon, with interstices between the shapes. Each shape contacts at least one shape of an adjacent layer, the interstices throughout the plurality of layers are interconnected, and the interstices comprise a second material, e.g., silicon dioxide. Typically, the second material is etched from the interconnected interstices to provide a structure of the first material and air, this structure designed to provide a particular photonic band gap.