The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jul. 19, 2000
Kent Liao, Pin Dong Hsien, TW;
Mosel Vitelic, Inc., Hsin Chu, TW;
Abstract
A process of fabricating a shallow trench isolation structure includes the steps of: providing a substrate; forming a first insulating layer over the substrate; forming a nitride masking layer over the first insulating layer; patterning and etching the nitride masking layer, the first insulating layer and the substrate to remove portions of the nitride masking layer, the first insulating layer and the substrate thereby forming an exposed trench in the substrate, the trench substantially defining boundaries of the isolation structure; depositing a second insulating layer into the trench and over the nitride masking layer; planarizing the second insulating layer to expose the nitride masking layer; removing the nitride masking layer to expose the first insulating layer, and forming a divot proximate an edge of the trench; depositing a silicon layer into the divot, and over the first insulating later and the second insulating layer; etching the silicon layer to expose the first insulating layer, a central portion of the second insulating layer, and leaving a remaining portion of the silicon layer filling the divot; and oxidizing the remaining portion of the silicon layer.