The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jun. 15, 2001
Wen-Chieh Lee, Hsinchu, TW;
Abstract
The present invention provides a ROM having a plurality of memory cell blocks each composed of a main bit line, a ground bit line, and a plurality of memory cells for storing information, which comprises: a plurality of up select transistors for selecting a memory cell block connected to the main bit line from a plurality of the memory cell blocks; and a plurality of down select transistors for selecting a memory cell block connected to the ground line from a plurality of the memory cell blocks, said up select transistors and down select transistors being arranged alternately with the memory cell block in between, wherein the layout pattern of said up select transistors and down select transistors being rotated 90 degrees. Under this kind of new layout pattern, the main bit lines and the ground bit lines will not be affected by the performing of ion implantation process, therefore, the junction leakage current will not be increased.