The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2002

Filed:

Nov. 22, 2000
Applicant:
Inventors:

Carl Radens, LaGrangeville, NY (US);

Mary E. Weybright, Pleasant Valley, NY (US);

Gary Bronner, Stormville, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 3/1062 ;
Abstract

An integrated circuit device is presented. The integrated circuit device of the present invention comprises a semiconductor substrate having a combination of transistor gates formed using a conventional dielectric-capped gate stack for self-aligned diffusion contacts (SAC) as well as a transistor gate structure formed by removing the dielectric-cap gate stack from selected regions of the semiconductor substrate and replacing the dielectric-cap gate stack with a second gate conductor which is patterned using a damascene process.


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