The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Sep. 19, 2000
Anne Sanderfer, Campbell, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a semiconductor device by forming layers of materials on a semiconductor substrate and utilizing a series of etch chemistries to remove portions of the layers of materials to form a metal stack. A patterned layer of photoresist determines the portions of the layers that will be etched. An etch process etches a hardmask material, a breakthrough etch process etches an antireflection layer, a conventional main etch process etches approximately 80 percent of the metal film, a first overetch process for a first selected period of time and a second overetch process for a second selected period of time provides a metal film stack having straight profiles and smooth sidewalls.