The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Dec. 14, 2000
Tom J. McIntyre, Nokesville, VA (US);
Tuyet T. Bach, Manassas, VA (US);
Andrew TS Pomerene, Leesburg, VA (US);
BAE Systems, Information and Electronic Systems Integration, Inc., Nashua, NH (US);
Abstract
A method for manufacturing microscopic canals within a semiconductor is disclosed. A shallow trench is initially formed on a substrate using a patterned photoresist. After the patterned photoresist has been removed from the substrate, a separation layer, such as a Titanium layer, is deposited on the substrate. Subsequently, a cap layer, such as a Titanium nitride layer, is deposited on the separation layer. Both the separation layer and the cap layer are then polished off from the surface of the substrate. Finally, a Tungsten layer is deposited on the substrate and in the trench such that a microcanal will be formed within the trench as a result.