The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Sep. 02, 1998
Kelly T. Hurley, Boise, ID (US);
Other;
Abstract
A process of forming isolation structures in semiconductor substrates comprises exposing a selected region of the substrate to an oxidizing ambient held at a first predetermined temperature. As the temperature of the oxidizing ambient is ramped up towards a second predetermined temperature, a relative equilibrium state between oxidation rate and the oxide viscosity is maintained. The process of the present embodiment advantageously is maintained through, the remainder of the equilibrium state oxidation process, so that an isolation layer can be grown without exerting defect-inducing stress over the silicon substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile