The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Mar. 08, 2000
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for forming trench isolation regions in a semiconductor device reliably electrically isolates a device and enhances a device density. The method for forming trench isolation regions includes forming a trench on a surface of a semiconductor device with a predetermined depth; forming a nitride liner layer on the surface of the semiconductor including the trench, forming a gas distribution region which is uniformly distributed on the nitride liner layer; and forming an insulation layer by filling the trench after said forming of the gas distribution region. The gas distribution region is preferably formed by introducing an ozone gas. The insulation layer is preferably formed by simultaneously introducing ozone gas and TEOS(Tetra Ethyl Ortho-Silicate) chemical.