The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Nov. 22, 2000
Applicant:
Inventor:
Hirokazu Ueda, Hyogo, JP;
Assignee:
KMT Semiconductor, Ltd., Hyogo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1339 ;
U.S. Cl.
CPC ...
H01L 2/1339 ;
Abstract
A gate electrode having a gate length of 0.4 &mgr;m or less is formed on a semiconductor substrate. Gate length of this gate electrode is measured, and dose of ion implantation for forming the source region and the drain region is variably set according to the gate length measured value so that transistor characteristics relating to the short-channel effect comes to a specified level.