The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Oct. 04, 1999
Applicant:
Inventor:
Hiroshi Yanagigawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
A high withstand voltage diode for protecting a high-voltage transistor has a first region of a second conductivity type formed on the substrate of a first conductivity type, a high-concentration second region of the second type formed on the first region , a third region of the first conductivity type formed so as to, be adjacent to the first region , a high-concentration fourth region of the first conductivity type formed on the surface of the third region , and a gate electrode that straddles the first region and the third region with an intervening gate oxide film, and which is electrically connected to the fourth region.