The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Nov. 16, 2000
Yoshikazu Tsunemine, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided are a method of manufacturing a stacked capacitor with which it is easy to fabricate even when a noble metal such as platinum is used for a lower electrode, and a stacked capacitor which can suppress a chemical reaction between a dielectric film or a sidewall lower electrode and a conductive plug. The method comprises the steps of: forming an insulating film ( ); forming a film to be etched on the insulating film ( ); forming a pattern for a lower electrode core ( A) which extends through the film to be etched and the insulating film ( ) and extends to part of a conductive plug ( ); burying a material for the lower electrode core ( A) into the pattern; burying a top insulating film ( A) and removing the film to be etched; depositing a material for a sidewall lower electrode ( A) and performing an etch back; and forming a dielectric film ( ) and upper electrode ( ). The occurrence of chemical reaction can be suppressed because the insulating film ( ) prevents the conductive plug ( ) from making contact with the dielectric film ( ) or the sidewall lower electrode ( A).