The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2002

Filed:

Dec. 28, 1998
Applicant:
Inventors:

Karel Domansky, Richland, WA (US);

Glen E. Fryxell, Kennewick, WA (US);

Jun Liu, West Richland, WA (US);

Nathan J. Kohler, Richland, WA (US);

Suresh Baskaran, Kennewick, WA (US);

Assignee:

Battelle Memorial Institute, Richland, WA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 3/3159 ;
U.S. Cl.
CPC ...
C01B 3/3159 ;
Abstract

The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.


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