The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Oct. 22, 1999
Yiming Huai, Pleasanton, CA (US);
Geoff Anderson, Pleasanton, CA (US);
Mahendra Pakala, San Jose, CA (US);
Wenjie Chen, Cupertino, CA (US);
Ningjia Zhu, Fremont, CA (US);
Read-Rite Corporation, Fremont, CA (US);
Abstract
A hybrid dual spin valve sensor includes a standard spin valve sharing a common free layer with a synthetic spin valve. The standard spin valve consists of a first antiferromagnetic layer having a first blocking temperature, a first soft ferromagnetic layer, a first spacer layer, and the common free layer. The synthetic spin valve consists of the common free layer, a second spacer, a second soft ferromagnetic layer, a third spacer layer, a third soft ferromagnetic layer, and a second antiferromagnetic layer having a second blocking temperature. Each of the two antiferromagnetic layers has a fixed magnetization orientation antiparallel to the other. A lead set configured to pass a sensing current from a current source through the hybrid dual spin valve, and a sensing circuit configured to measure changes in resistance within the hybrid dual spin valve, complete the sensor. A method for producing a hybrid dual spin valve sensor includes providing such a sensor wherein the magnetization orientations of the two antiferromagnetic layers are disordered, followed by processing at a first temperature and a second temperature. Processing at the first temperature is used to set the magnetization orientation of the antiferromagnetic layer with the higher blocking temperature. Processing at a lower second temperature is used to set the magnetization orientation of the antiferromagnetic layer with the lower blocking temperature such that it is antiparallel to the magnetization orientation of the antiferromagnetic layer with the higher blocking temperature.