The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Feb. 16, 1999
Chih-Ming Huang, Hsinchu, TW;
Tsu-An Lin, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
An improved method of preventing copper poisoning in the fabrication of metal interconnects on a semiconductor substrate comprises sequential formation of a copper layer, a first stop layer, a first inter-metal dielectric layer, a second stop layer, and a second inter-metal dielectric layer over the substrate. The second inter-metal dielectric layer and the second stop layer are defined to form an opening. A conformal first glue/barrier layer is formed over the substrate. The first glue/barrier layer and the first inter-metal dielectric layer are patterned to form a via hole below the opening until the first stop layer is exposed. Spacers are formed on sidewalls of the opening and the via hole below the opening. The first stop layer at bottom of the via hole is removed to expose the copper layer.