The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Mar. 08, 1999
Seiji Manabe, Itami, JP;
Mitsuo Kimoto, Tokyo, JP;
Other;
Abstract
A barrier layer is formed at a bottom portion, for example, of a through hole. The thickness of the barrier layer at an upper area, for example, of the through hole is made uniform. The method of manufacturing a semiconductor device includes the steps of: forming a barrier layer by sputtering on a main surface of a silicon substrate while maintaining a first distance between a main surface of the target and the main surface of the silicon substrate; and forming a titanium nitride layer by sputtering on and adjacent to a titanium nitride layer by scattering a target material while maintaining a second distance longer than the first distance between the main surface of the target and the main surface of the silicon substrate.