The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Jul. 12, 2000
Applicant:
Inventor:
Jude A. Dunne, Menlo Park, CA (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 ;
U.S. Cl.
CPC ...
G03F 7/00 ;
Abstract
The invention provides a process for monitoring the quality of via or trench formation in the production of a semiconductor device. More particularly, the invention pertains to a process for detecting side wall oxidation of low dielectric constant materials during the formation of vias or trenches in dielectrics. At least one via and/or trench is cleaved and contacted with a solvent to remove partially oxidized portions of dielectrics on the side walls, enabling defects to be visually inspected.