The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Jan. 17, 2000
Applicant:
Inventors:
Gautam Bhandari, Danbury, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Assignee:
Advanced Technology Materials, Inc., Danbury, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/406 ; C23C 1/414 ; C23C 1/448 ; H05H 1/24 ; H01L 2/1443 ;
U.S. Cl.
CPC ...
C23C 1/406 ; C23C 1/414 ; C23C 1/448 ; H05H 1/24 ; H01L 2/1443 ;
Abstract
Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.