The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Mar. 16, 1999
Kazunori Kobayashi, Toyama, JP;
Tomoaki Ishihara, Toyama, JP;
Akira Nakamura, Toyama, JP;
Toshihide Nobusada, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method for forming a thin film of the present invention includes the steps of performing sequentially first idling discharge under application of a first level of discharge power upon gas introduction (period t ), intermediate idling discharge under application of a second level of discharge power lower than the first level (period t ), and second idling discharge at the first level of discharge power (period t ), so that the pressure of sputtering gas and an intermediate product produced during the idling discharge are stabilized. The discharge power is lowered to the second level, the shutter is opened, and an ITO thin film, for example, is formed on a first substrate (t ). Thereafter, the same cycles are repeated to form ITO thin films on substrates.