The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2002

Filed:

Oct. 30, 1998
Applicant:
Inventors:

Ray C. Lee, Taipei, TW;

Te-Hsun Pang, Chia-Yi, TW;

Tonny Shu, Mao-Li Hsien, TW;

Birdson Lee, Kao-Hsiung, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
E23C 1/600 ;
U.S. Cl.
CPC ...
E23C 1/600 ;
Abstract

An apparatus is provided for treating a wafer under fabrication with an erosive plasma, in a contamination controlled environment. The apparatus includes a chamber for containing the wafer to be treated by the plasma, and for isolating the wafer from contaminants external to the chamber during treatment. The chamber also includes one or more plasma erosion resistive screws. Each screw has a shaft secured within the chamber so that the shaft is unexposed to the plasma, and a raised head which is integral with, and made of the same material as, the shaft. The head has a continuous, surface shape with a reduced number of edges so as to reduce the accumulation of charge thereon, thereby resisting erosion by the plasma.


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