The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Feb. 01, 2000
Shih-Hsien Yang, Hsinchu, TW;
Chuan-Jane Chao, Hsinchu, TW;
Winbond Electronics Corporation, Taiwan, CN;
Abstract
A method for measuring both buried strap and deep trench leakage currents in DRAM cell capacitors. By keeping the voltages on both plates of the capacitor equal, the buried strap leakage current (IBS) may be isolated and measured. A range of voltages is applied to a terminal of an associated transistor to obtain a corresponding range of buried strap leakage currents. An unequal voltage is next applied across the capacitor, and a total leakage current is measured. By applying a known potential to a substrate of the transistor during this total leakage current measurement, the associated IBS may be determined. Next, the IBS is subtracted from the measured total leakage current to obtain the deep trench leakage current (IDT).