The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Sep. 27, 1999
John C. Holst, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A lateral bipolar transistor includes a semiconductor layer overlying an electrically insulating material and an insulating layer overlying a central portion of the semiconductor layer. A contact hole resides in the insulating layer and a conductive material overlies the insulating layer and makes electrical contact with the semiconductor layer through the contact hole, thereby forming a base contact. The semiconductor layer has a first conductivity type in a central region which substantially underlies the conductive material, and has a second conductivity type in regions adjacent the central region. The first region forms a base region and the adjacent regions form a collector region and an emitter region, respectively. A method of forming a lateral bipolar transistor device is also disclosed. The method includes forming a semiconductor layer over an insulating material and forming an insulating layer over the semiconductor material. A base contact hole is then formed in the insulating layer and a conductive base contact region is formed over a portion of the insulating layer. The base contact region overlies the base contact hole and makes an electrical connection to a middle portion of the semiconductor layer, which corresponds to a base region. Lastly, a collector region and an emitter region are formed on opposite sides of the base region such that the collector region and the emitter region are adjacent the base region, respectively.