The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jun. 08, 1999
Seiichi Mori, Tokyo, JP;
Toshiharu Watanabe, Yokohama, JP;
Masataka Takebuchi, Yokosuka, JP;
Kazuaki Isobe, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A first side-wall film is formed on the sides of a gate electrode of a high-voltage transistor, and a second side-wall film is provided on the first side-wall film. The first side-wall film has an etching rate lower that of a pre-metal dielectric, and the second side-wall film has an etching rate substantially equal to that of the of the pre-metal dielectric. The LDD of the high-voltage transistor is provided in that part of the semiconductor substrate which lies right below the first and second side-wall films. The source/drain diffusion layer of the high-voltage transistor is formed in that part of the substrate which is outside the second side-wall film. A first side-wall film having an etching rate lower than that of the pre-metal dielectric and/or a second side-wall film having an etching rate substantially equal to that of the pre-metal dielectric are provided on the sides of the gate electrode of the low voltage transistor. The LDD of the low voltage transistor is provided in that part of the substrate which lies right below the first side-wall film. The drain/source diffusion layer of the low voltage transistor is provided in two continuous parts of the substrate which lie, respectively, right below and outside the second side-wall film.