The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Nov. 16, 2000
Hiroyuki Yaegashi, Kawasaki, JP;
Takuya Watanabe, Kawasaki, JP;
Tetsuya Kida, Kawasaki, JP;
Akira Komorita, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A thin film transistor comprises a gate electrode formed on a substrate , a gate insulation film , a semiconductor layer , a source electrode and a drain electrode . The gate electrode, the source electrode or the drain electrode include a first conductor film , a second conductor film and a third conductor film . The first conductor film is formed of a metal selected out of Al, Cu and Ag, or an alloy of a metal, as a main component, selected out of Al, Cu and Ag, and has the side surfaces sloped. The second conductor film is formed of a film of Mo containing nitrogen, or an alloy of Mo, as a main component, containing nitrogen, and has the side surfaces sloped. The third conductor film is formed of Mo or an alloy of Mo as a main component.