The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jun. 02, 1995
Ajit Pramod Paranjpe, Plano, TX (US);
Pushkar Prabhakar Apte, Dallas, TX (US);
Mehrdad M. Moslehi, Los Alto, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A silicide process using a pre-anneal amorphization implant prior to silicide anneal. A layer of titanium is deposited and reacted to form titanium silicide ( ) and titanium nitride. The titanium nitride is removed and a pre-anneal amorphization implant is performed to enable increased transformation of the silicide ( ) from a higher resistivity phase to a lower resistivity phase. A heavy dopant species ( ) is used for the pre-anneal amorphization implant such as arsenic, antimony, or germanium. After the implant, the silicide anneal is performed to accomplish the transformation. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.