The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Mar. 14, 2000
Yuuichi Sato, Kanagawa, JP;
Hisayoshi Yamoto, Kanagawa, JP;
Hideo Yamanaka, Kanagawa, JP;
Hajime Yagi, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
Polycrystalline silicon film forming methods to improve movement of electrons and holes and thus allow the fabrication of high performance semiconductor elements is needed. In a method of the present invention, polycrystalline is formed utilizing as a material, a chemical compound comprising at least one type of impurity from among tin (Sn), germanium (Ge) and lead (Pb) and a polycrystalline silicon film doped with impurities from at least one type from among tin (Sn), germanium (Ge) and lead (Pb) thus formed. In another method, polycrystalline silicon is formed, and the polycrystalline silicon film thus obtained is afterwards then doped with an impurity consisting of at least one type from among tin (Sn), germanium (Ge) and lead (Pb).