The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jun. 01, 2000
Fumiki Aiso, Tokyo, JP;
Toshiyuki Hirota, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A silicon layer containing microcrystal is formed on a semiconductor substrate 10 having an amorphous silicon layer formed on the surface thereof (t and t ). Continuously, HSGs (hemispherical grains) are formed, in the same furnace, on the silicon layer using microcrystal on the silicon layer as a nucleus (t and t ). Further, a source gas containing impurities is introduced into the furnace to diffuse impurities into the HSGs (t and t ), wherein a lower electrode is formed. Also, during the processes from t through t , the partial pressure of water and oxygen in the furnace is set to 1×10 Torr or less. Furthermore, during the processes from t through t , the temperature in the furnace is set to 550 through 600° C.