The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Aug. 31, 2000
Applicant:
Inventor:
Vincent Fortin, Santa Clara, CA (US);
Assignee:
Zarlink Semiconductor Inc., Ottawa, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
A dielectric layer of silica glass is formed by plasma enhanced chemical vapor deposition (PECVD) wherein a gaseous precursor of the dielectric layer is supplied to a deposition chamber in the presence of an electromagnetic field. The supply of the gaseous precursor is discontinued while continuing to maintain the electromagnetic field for a delay time exceeding 0.5 seconds after the discontinuation of the supply of the gaseous precursor. This improves the hydrophilic properties of said film. A siloxane-based SOG film is deposited on the dielectric layer.