The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Jun. 22, 2000
Robert Arthur Rodriguez, Austin, TX (US);
Heather Marie Klesat, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for forming void free tungsten plug contacts ( ) begins by etching a contact opening ( ) using a C F and CHF chemistry. The etch chemistry is then changed to an O and CH F chemistry in order to insitu remove the contact photoresist while tapering an upper portion of the contact opening. A tungsten deposition process is then performed whereby the tapered portion of the contact reduces the effects of nonconformal and step-coverage-inconsistent tungsten deposition wherein voids in the contact are either substantially reduced or totally avoided within the contact structure. The reduction of or total elimination of voids ( ) within the tungsten contact will increase yield, increase reliability, and reduce electromigration failures within integrated circuit devices.