The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
May. 26, 2000
Yoshihisa Matsubara, Tokyo, JP;
Ko Noguchi, Tokyo, JP;
Shinya Ito, Tokyo, JP;
Noriaki Oda, Tokyo, JP;
Akira Matsumoto, Tokyo, JP;
Takashi Ishigami, Tokyo, JP;
Masahiko Nakamae, Tokyo, JP;
Tadahiko Horiuchi, Tokyo, JP;
Kazuhiko Endo, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Yoshishige Matsumoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.