The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Feb. 10, 2000
Applicant:
Inventors:
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/146 ;
U.S. Cl.
CPC ...
H01L 2/146 ;
Abstract
This invention is a method for die separation of a wafer by ion implantation, wherein the die spacing is reduced and the die separation precision reaches a sub-micron level. The separated dies are obtained by wafer splitting after heat treatment and have cleavage roughness at a nano-meter level. The process method comprises the steps of: placing a wafer into an ion implanter; implanting gaseous ions into the split lines of said wafer with assistance of a mask; performing heat treatment of said wafer that is to split at the split lines; and completing die separation.