The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2002

Filed:

Mar. 23, 2001
Applicant:
Inventors:

Toshiaki Hongo, Amagasaki, JP;

Tetsu Osawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength &lgr; of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength &lgr; is represented by &lgr;=&lgr; n, where &lgr; is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(&egr; ) , where &egr; is a specific dielectric rate of the dielectric plate in a vacuum.


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