The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2002

Filed:

Aug. 11, 2000
Applicant:
Inventors:

Pei-Yuan Gao, San Jose, CA (US);

Narendra Patel, San Jose, CA (US);

Allen S. Yu, Fremont, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/940 ;
Abstract

A method and semiconductor wafer is provided for measurement and recordation of hydrophilic elements in semiconductor insulators by depositing a moisture barrier layer over a previously deposited insulating layer of a semiconductor wafer. The semiconductor wafers become pilot or calibration wafers which may be placed immediately in an infrared radiation instrument to allow measurement of the concentration of hydrophilic elements in the insulating layer or stored for recordation purposes and measured later.


Find Patent Forward Citations

Gao, Pei-Yuan. (2002). Semiconductor wafer for measurement and recordation of impurities in semiconductor insulators (U.S. Patent No. 6369453). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6369453

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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