The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Dec. 22, 1999
Applicant:
Inventors:
Naoharu Sugiyama, Yokohama, JP;
Atsushi Kurobe, Yamato, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1117 ;
U.S. Cl.
CPC ...
H01L 3/1117 ;
Abstract
A method of manufacturing a semiconductor device comprising the steps of forming a first crystal silicon layer doped with oxygen on a single crystal silicon substrate, forming a crystal silicon-germanium layer on the first crystal silicon layer, forming a second crystal silicon layer on the crystal silicon-germanium layer, and imparting strain to the second crystal silicon layer by a thermal treatment.