The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Feb. 21, 2001
Samuel D Naffziger, Ft Collins, CO (US);
Donald R Weiss, Ft Collins, CO (US);
John Wuu, Ft Collins, CO (US);
Other;
Abstract
A static random access memory (SRAM) cell is provided that optimizes the density of memory cells in an array with the maximum speed possible in addressing the memory cells for reading and writing operations. The SRAM cell is divided into groups of SRAM arrays of cells with a centrally located distributed global decoder to address any individual memory cell in the SRAM array. The global decoder accepts an addressing input and outputs a signal for selecting an individual column of memory cells in the SRAM array. The global decoder also outputs a signal selecting an individual row of memory cells contained in the SRAM array. The global decoder may include logic to decode addressing bits to produce a group select signal. Thus, the global decoder is able to select any single memory cell in the SRAM cell for reading or writing specific logical states.