The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Apr. 03, 2000
Joseph D. Cuchiaro, Colorado Springs, CO (US);
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Larry D. McMillan, Colorado Springs, CO (US);
Symetrix Corporation, Colorado Springs, CO (US);
Abstract
A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of metal oxide material in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following nitrides: aluminum titanium nitride (Al Ti N ), aluminum silicon nitride (Al Si N ), aluminum niobium nitride (AlNb N ), aluminum tantalum nitride (AlTa N ), aluminum copper nitride (Al Cu N ), tungsten nitride (WN), and copper nitride (Cu N ). The thin film of metal oxide is ferroelectric or high-dielectric, nonferroelectric material. Preferably, the metal oxide comprises ferroelectric layered superlattice material. Preferably, the hydrogen barrier layer is located directly over the thin film of metal oxide.