The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Jan. 21, 1998
Jiong-Ping Lu, Dallas, TX (US);
Ming-Jang Hwang, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An embodiment of the instant invention is a method of depositing a TiN-based film over a semiconductor wafer, the method comprising the steps of: substantially simultaneously subjecting the semiconductor wafer to TiCl , H , and N ; and subjecting the semiconductor wafer to a plasma, such that the combination of the TiCl , H , and N and the plasma cause the deposition of a TiN based film to form over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to SiH so as to form a TiSi N film over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to B H so as to form a TiN B layer over the semiconductor wafer.