The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Jun. 25, 1999
Applicant:
Inventors:
Yuusuke Sato, Bunkyo-Ku, JP;
Takashi Kataoka, Kawasaki, JP;
Naoki Tamaoki, Setagaya-Ku, JP;
Toshimitsu Ohmine, Meguro-Ku, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/634 ;
U.S. Cl.
CPC ...
C23C 1/634 ;
Abstract
The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.