The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2002

Filed:

Sep. 18, 1998
Applicant:
Inventors:

Richard A. Linke, Laurenceville, NJ (US);

Hirohito Yamada, Plainsboro, NJ (US);

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/08 ; H01S 3/30 ; H01S 5/00 ; G02B 6/00 ; G03H 1/02 ;
U.S. Cl.
CPC ...
H01S 3/08 ; H01S 3/30 ; H01S 5/00 ; G02B 6/00 ; G03H 1/02 ;
Abstract

A semiconductor laser with a rewritable wavelength stabilizer which comprises a laser mirror made of a grating written into a photorefractive material, in which the oscillation wavelength of the laser diode is determined by the period of the grating. This allows the refractive index of the grating to be changed by illuminating the photorefractive material after cooling thereof to a temperature at which most of the doped impurities form DX centers. The grating can be erased by heating the photorefractive material to a temperature at which most DX centers are ionized, which erases the grating. Thereafter the photorefractive material is cooled again to a temperature at which most impurities become DX centers, and a new grating can be written in the photorefractive material. The wavelength of the semiconductor laser can be changed repeatedly by erasing and rewriting the grating therein. The laser diode is maintained and operated at a low temperature to maintain the grating semi-permanently therein while the temperature remains low.


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