The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Dec. 27, 1999
Applicant:
Inventors:
Assignee:
Chartered Semiconductor Manufacturing LTD, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1311 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1311 ; H01L 2/1461 ;
Abstract
A method for fabricating a self-aligned antifuse cell is described. An antifuse is provided overlying a metal plug in an insulating layer on a semiconductor substrate. A dielectric layer is deposited overlying the antifuse. The dielectric layer is etched to form dielectric spacers on the sidewalls of the antifuse. A top metal layer is deposited overlying the antifuse and dielectric spacers and patterned to complete the antifuse cell in an integrated circuit device.