The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Feb. 28, 2001
Plasma-enhanced chemical vapor deposition (cvd) method to fill a trench in a semiconductor substrate
Applicant:
Inventors:
Terry Alan Breeden, Cedar Creek, TX (US);
Iraj Eric Shahvandi, Round Rock, TX (US);
Michael Thomas Tucker, McKinney, TX (US);
Olivier Gerard Marc Vatel, Round Rock, TX (US);
Karl Emerson Mautz, Austin, TX (US);
Ralf Zedlitz, Dresden, DE;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
In a CVD chamber ( ) having a chuck ( ) to hold a semiconductor substrate ( ) and having a plasma generator ( ) to generate a plasma ( ), a trench in the substrate is filled with dielectric material from ions ( ) of the plasma. The ions are forced to move in a direction ( ) that is substantially perpendicular to the surface of the substrate by a pulsed unidirectional voltage between the plasma generator and the substrate, by a circular magnetic field, or by a combination of both fields.