The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Jul. 06, 2000
Applicant:
Inventors:
Assignee:
Streag CVD Systems LTD, Migdal Ha'emek, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/624 ;
U.S. Cl.
CPC ...
C23C 1/624 ;
Abstract
A method and apparatus for selectively depositing hemispherical grained silicon on the surface of a wafer in a process chamber. The chamber is evacuated so that a partial pressure of water vapor in the chamber is less than 10 torr, preferably using a turbomolecular pump and a water vapor pump in cooperation. A process gas mixture including silicon is introduced into the chamber. The surface of the wafer is seeded with silicon nuclei, and the wafer is annealed to convert the silicon to HSG.