The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Apr. 04, 2001
Shui-Chin Huang, Ben-Yuan St. Tainan, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A method for manufacturing the floating gate of a flash memory. First, a substrate is provided. A gate oxide layer, a polysilicon layer and a silicon nitride layer are sequentially formed over the substrate. Gate position is defined and then the silicon nitride layer above the gate position is removed. Th exposed polysilicon layer is oxidized to from a floating gate oxide layer. A buffer layer is formed over the silicon nitride layer and the floating gate oxide layer. A first spacer is formed on the sidewall of the buffer layer. Thereafter, a second spacer is formed. Using the second spacer as a mask, the exposed floating gate oxide layer is removed. The buffer layer, the first spacer and the second spacer above the polysilicon layer and the floating gate oxide layer are removed. Finally, the polysilicon layer not covered by the floating gate oxide layer is removed to form a complete floating gate of a flash memory.