The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Jun. 02, 2000
Katsuhide Manabe, Ichinomiya, JP;
Akira Mabuchi, Nagoya, JP;
Hisaki Kato, Okazaki, JP;
Michinari Sassa, Nagoya, JP;
Norikatsu Koide, Nagoya, JP;
Shiro Yamazaki, Inazawa, JP;
Masafumi Hashimoto, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Other;
Abstract
Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al Ga N) in which the n-layer of n-type gallium nitride compound semiconductor (Al Ga N) is of double-layer structure including an n-layer of low carrier concentration and an n -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al Ga N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al Ga N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.